The conduction behaviour of different compositions of the Bi1‑xTex system with 30 ⩽x ⩽ 60 at.% is ohmic. Transition from metallic to semiconducting behaviour could be observed as the ambient temperature exceeds a certain value dependent on both x and the conditions of annealing. The activation energy of conduction (ΔEσ) calculated in the semiconducting region varied with x in an unsequential manner emphasizing the role of the existing different phases. However, the change in electrical conductivity could be attributed to a corresponding change in ΔE

A systematic study was made of the semiconducting chalchogenide glass system Ge20SbxSe80−x with 5 x 40 at.%. The dependence of the electrical conductivity of bulk specimens on the temperature revealed the role of both the Sb content and the annealing temperature. X-Ray examination as well as differential scanning calorimeter analyses (DSC) were helpful in the identification of the structural changes. The characteristics of the lone pair amorphous semiconductor seem to account for the observed dependence of the localized density of states, N(E), at the Fermi energy, on the annealing temperature

A systematic study was made of the semiconducting chalchogenide glass system Ge20SbxSe80−x with 5 x 40 at.%. The dependence of the electrical conductivity of bulk specimens on the temperature revealed the role of both the Sb content and the annealing temperature. X-Ray examination as well as differential scanning calorimeter analyses (DSC) were helpful in the identification of the structural changes. The characteristics of the lone pair amorphous semiconductor seem to account for the observed dependence of the localized density of states, N(E), at the Fermi energy, on the annealing temperature