Laser power-induced Fermi-level shift in graphene/Al2O3 under ambient atmosphere: Toward neutralizing unintentional graphene doping
Manipulating unintentional doping in graphene layers, which is influenced by environmental factors and supporting substrates, is of significant concern for the performance and advancement of graphene-based devices. In this context, laser-induced tuning of charge carriers in graphene facilitates the exploration of graphene’s properties in relation to its surroundings and enables laser-assisted functionalization. This has the potential to advance optoelectronic devices that utilize graphene on transparent dielectric substrates, such as Al 2 O 3. In this work, laser power (P L) in Raman spectroscopy is used as a convenient contactless tool to manipulate and control unintentional carrier concentration and Fermi level position (E F) in graphene/α-Al 2 O 3 (G/Al 2 O 3) under ambient conditions. Samples are annealed at 400 C for two hours in an (Ar+ H 2) atmosphere to remove any chemical residues. Analysis of the peak …

