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10 Gbit/s 2mW Inductorless Transimpedance Amplifier

مؤلف البحث
M. Atef and H. Zimmermann
المشارك في البحث
سنة البحث
2012
مجلة البحث
IEEE International Symposium on Circuits and Systems (ISCAS2012), Seoul, South Korea
تصنيف البحث
3
صفحات البحث
pp. 1728 -1731
ملخص البحث

This work presents the design and performance of a 10Gbit/s transimpedance amplifier (TIA) implemented in a 40nm CMOS technology. The introduced TIA uses an inverter with active common-drain feedback (ICDF-TIA). The TIA is followed by a two-stage differential amplifier and a 50Ω differential output driver to provide an interface to the measurement setup. The optical receiver shows an optical sensitivity of −19dBm for a BER= 10−12. The transimpedance amplifier achieves a transimpedance gain of 47dBΩ, 8GHz bandwidth with 0.45pF total input capacitance for the photodiode, ESD protection and input PAD. The TIA occupies 0.0002mm2 whereas the complete optical receiver occupies a chip area of 0.16mm2. The power consumption of the TIA is only 2mW and the complete chip dissipates 16mW for a 1.1V single supply voltage. The complete optical receiver has a 58dBΩ transimpedance gain and 7GHz bandwidth.