InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectanceb

Faculty of Engineering

Assiut University

InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectanceb

Research Authors
P. Hazdra, J. Oswald, M. Atef, K. Kuldova, A. Hospodkova, E. Hulicius and J. Pangrac
Research Member
Mohamed Atef Elsayed Abdelaal
Research Department
Electrical Engineering Department
Research Year
2008
Research Journal
Materials Science and Engineering Journal: B
Research Vol
Vol. 147, No. 2
Research Rank
1
Research_Pages
pp.175-178